| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 15110GOA | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 170 K |
| HYB511000BJL-70 | 1M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 192 K |
| MAZ5110 | Silicon planer type zener diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 56 K |
| MSM511000C-45JS | 1,048,576-word x 1-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 224 K |
| MSM511000C-50JS | 1,048,576-word x 1-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 224 K |
| MSM511000C-60JS | 1,048,576-word x 1-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 224 K |
| MSM511000C-70JS | 1,048,576-word x 1-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 224 K |
| MSM511000CL-45JS | 1,048,576-word x 1-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 224 K |
| UNR5110 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR5110 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
|---|
