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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ISPLSI5512VA-100LQ208100 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationPQFP208-55°C125°C331 K
ISPLSI5512VA-100LQ208100 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationPQFP208-55°C125°C331 K
ISPLSI5512VA-110LB388110 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA388-55°C125°C331 K
ISPLSI5512VA-110LQ208110 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationPQFP208-55°C125°C331 K
ISPLSI5512VA-70LB388I70 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA388-55°C125°C331 K
ISPLSI5512VA-70LQ20870 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationPQFP208-55°C125°C331 K
M4A3-512/160-10YC10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP2080°C70°C1 M
M4A3-512/160-12YC12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP2080°C70°C1 M
M4A3-512/192-10FAC10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-512/192-7FAC7ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
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