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Example: max232 |
Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|---|---|---|---|---|---|---|
MC-4R512FKE6D-653 | 512M-byte (256M-WORD x 16-bit) direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE6D-745 | 512M-byte (256M-WORD x 16-bit) direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE6D-845 | 512M-byte (256M-WORD x 16-bit) direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE8D-653 | 512M-bit direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE8D-745 | 512M-bit direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
MC-4R512FKE8D-845 | 512M-bit direct rambus DRAM RIMM module | distributor | BGA | 184 | - | - | 132 K |
PD45128163G5-A75L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128163G5-A80L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128441G5-A75L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
PD45128441G5-A80L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
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