| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GLT40516-10E | 32k x 16 embedded EDO DRAM | distributor | - | - | 0°C | 70°C | 249 K |
| GLT5160L16-10TC | 100 MHz; 16M (2-bank x 524288-word x 16 bit) synchronous DRAM | distributor | TSOP | 50 | 0°C | 70°C | 6 M |
| GLT5160L16-8TC | 125 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM | distributor | TSOP | 44 | 0°C | 70°C | 6 M |
| HAL516SF-A | Hall effect sensor (62 kHz) | Micronas-Intermetall | - | 3 | -40°C | 170°C | 321 K |
| HAL516SF-E | Hall effect sensor (62 kHz) | Micronas-Intermetall | - | 3 | -40°C | 100°C | 321 K |
| HAL516SF-K | Hall effect sensor (62 kHz) | Micronas-Intermetall | - | 3 | -40°C | 140°C | 321 K |
| HAL516UA-A | Hall effect sensor (62 kHz) | Micronas-Intermetall | - | 3 | -40°C | 170°C | 321 K |
| HAL516UA-E | Hall effect sensor (62 kHz) | Micronas-Intermetall | - | 3 | -40°C | 100°C | 321 K |
| HAL516UA-K | Hall effect sensor (62 kHz) | Micronas-Intermetall | - | 3 | -40°C | 140°C | 321 K |
| LH5164AZ8 | CMOS 64K (8K x 8)static RAM | Sharp | SOP | 28 | -30°C | 60°C | 66 K |
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