| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GLT5160L16-6TC | 166 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM | distributor | TSOP | 44 | 0°C | 70°C | 6 M |
| GLT5160L16-7TC | 143 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM | distributor | TSOP | 44 | 0°C | 70°C | 6 M |
| K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 553 K |
| K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 553 K |
| K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 553 K |
| K4E151612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 553 K |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 553 K |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 553 K |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 553 K |
| K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 528 K |
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