| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCX52-10 | PNP medium power transistor. | Philips-Semiconductors | SOT89 | 3 | -65°C | 150°C | 58 K |
| BCX52-10 | PNP medium power transistor. | Philips-Semiconductors | SOT89 | 3 | -65°C | 150°C | 58 K |
| BUK452-100A | PowerMOS transistor. Drain-source voltage 100 V. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
| BUK452-100B | PowerMOS transistor. Drain-source voltage 100 V. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
| BUK552-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 10 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
| BUK552-100B | 100 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
| CY37512P352-100BGC | 5V, ISR high-performance CPLDs, 512 macrocells, 100MHz | Cypress-Semiconductor | BGA | 352 | 0°C | 70°C | 1 M |
| CY37512P352-100BGI | 5V, ISR high-performance CPLDs, 512 macrocells, 100MHz | Cypress-Semiconductor | BGA | 352 | -40°C | 85°C | 1 M |
| P7152-10 | Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection | distributor | - | - | 0°C | 40°C | 103 K |
| P7752-10 | Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection | distributor | - | - | 0°C | 40°C | 103 K |
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