| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N6521U | 2000 V rectifier 0.15-0.5 A forward current, 70 ns recovery time | distributor | - | 2 | -65°C | 175°C | 98 K |
| 2N5210 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 146 K |
| DF25210 | 1000V fast recovery diode | distributor | - | - | -40°C | 125°C | 58 K |
| DF25212 | 1200V fast recovery diode | distributor | - | - | -40°C | 125°C | 58 K |
| DF25214 | 1400V fast recovery diode | distributor | - | - | -40°C | 125°C | 58 K |
| DF25216 | 1600V fast recovery diode | distributor | - | - | -40°C | 125°C | 58 K |
| IRF5210S | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 186 K |
| IRF5M5210 | HEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.07 Ohm, ID = -34A | International-Rectifier | - | 3 | -55°C | 150°C | 113 K |
| IRF5N5210 | HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 150°C | 118 K |
| IRF7521D1 | FETKY MOSFET and schottky diode. VDSS = 20V, RDS(on) = 0.135 Ohm, schottky Vf = 039V. | International-Rectifier | Micro8 | 8 | -55°C | 150°C | 177 K |
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