Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IN74AC533N | Octal 3-state inverting transparent latch high-speed silicon-gate CMOS | distributor | Plastic DIP | 20 | -40°C | 85°C | 206 K |
IN74ACT533DW | Octal 3-state inverting transparent latch high-speed silicon-gate CMOS | distributor | SOIC | 20 | -40°C | 85°C | 183 K |
IN74ACT533N | Octal 3-state inverting transparent latch high-speed silicon-gate CMOS | distributor | Plastic DIP | 20 | -40°C | 85°C | 183 K |
IN74HC533DW | Octal 3-state inverting transparent latch, high-performance silicon-gate CMOS | distributor | SOIC | 20 | -55°C | 125°C | 168 K |
IN74HC533N | Octal 3-state inverting transparent latch, high-performance silicon-gate CMOS | distributor | Plastic DIP | 20 | -55°C | 125°C | 168 K |
TN5335K1 | 400V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 444 K |
TN5335N8 | 400V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 444 K |
TN5335NW | 400V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 444 K |
TP5335K1 | 350V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 434 K |
TP5335NW | 350V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 434 K |
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