Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5536A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-10% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
1N5536B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-5% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
1N5536C | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-2% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
1N5536D | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-1% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
1SMC5366 | 39 V, 5 W, surface mount silicon zener diode | distributor | - | 2 | -55°C | 150°C | 275 K |
1SMC5367 | 43 V, 5 W, surface mount silicon zener diode | distributor | - | 2 | -55°C | 150°C | 275 K |
1SMC5368 | 47 V, 5 W, surface mount silicon zener diode | distributor | - | 2 | -55°C | 150°C | 275 K |
1SMC5369 | 51 V, 5 W, surface mount silicon zener diode | distributor | - | 2 | -55°C | 150°C | 275 K |
5962D0053601TXA | 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). | distributor | Flatpack shielded | 36 | -55°C | 125°C | 128 K |
5962D0053602TXA | 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). | distributor | Flatpack shielded | 36 | -40°C | 125°C | 128 K |
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