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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5536A0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-10% tolerance.distributor-2-65°C200°C243 K
1N5536B0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-5% tolerance.distributor-2-65°C200°C243 K
1N5536C0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-2% tolerance.distributor-2-65°C200°C243 K
1N5536D0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-1% tolerance.distributor-2-65°C200°C243 K
1SMC536639 V, 5 W, surface mount silicon zener diodedistributor-2-55°C150°C275 K
1SMC536743 V, 5 W, surface mount silicon zener diodedistributor-2-55°C150°C275 K
1SMC536847 V, 5 W, surface mount silicon zener diodedistributor-2-55°C150°C275 K
1SMC536951 V, 5 W, surface mount silicon zener diodedistributor-2-55°C150°C275 K
5962D0053601TXA512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).distributorFlatpack shielded36-55°C125°C128 K
5962D0053602TXA512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).distributorFlatpack shielded36-40°C125°C128 K
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