| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5401 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 150°C | 151 K |
| 1N5401 | General purpose plastic rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -50°C | 175°C | 159 K |
| 1N5401 | 100 V, 3 A silicon rectifier | distributor | - | 2 | -65°C | 175°C | 32 K |
| 1N5401 | 100V, 3.0A plastic silicon rectifier | distributor | - | 2 | -55°C | 125°C | 33 K |
| 1N5401G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 175°C | 151 K |
| 1N5401G | 100 V, 1 A glass passivated rectifier | distributor | - | 2 | -65°C | 175°C | 32 K |
| 1N5401G | 100V, 3.0A glass passivated rectifier | distributor | - | 2 | -55°C | 150°C | 35 K |
| 1N5401G | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 150°C | 16 K |
| 2N5401 | Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 76 K |
| TC54VC5401EZB | Voltage detector. Detected voltage 5.4V. Output form: CMOS output . Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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