| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5401 | 100 V, 3 A silicon rectifier | distributor | DO | 2 | -50°C | 170°C | 81 K |
| 1N5401 | 3.0A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
| H2N5401 | 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | distributor | - | 3 | - | - | 38 K |
| HM5401 | Emitter to base voltage:6V; PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages | distributor | - | 3 | - | - | 34 K |
| HMBT5401 | Emitter to base voltage:5V; 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | distributor | - | 3 | - | - | 30 K |
| MMST5401 | 160V; 200mA PNP small signal surface mount transistor. Ideal for medium power amplification and switching | distributor | - | 3 | -55°C | 150°C | 41 K |
| NTE5401 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 60V. | distributor | TO92 | 3 | -40°C | 100°C | 18 K |
| UF5401 | 100 V, 3 A ultra-fast silicon rectifier | distributor | DO | 2 | -65°C | 150°C | 79 K |
| UF5401 | 3.0A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 82 K |
| UF5401GP | 3.0A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 85 K |
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