| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5402 | 200V; 3.0A rectifier; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 175°C | 62 K |
| 1N5402 | 200 V, 3 A, plastic silicon rectifier | distributor | DO | 2 | -65°C | 175°C | 126 K |
| 1N5402 | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
| 1N5402 | 200 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
| 1N5402G | 200V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5402GP | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
| KSC5402D | NPN Silicon Transistor Planar Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 155 K |
| NTE5402 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 100V. | distributor | TO92 | 3 | -40°C | 100°C | 18 K |
| UF5402 | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 82 K |
| UF5402GP | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 85 K |
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