Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5404 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 150°C | 151 K |
1N5404 | General purpose plastic rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -50°C | 175°C | 159 K |
1N5404 | 400 V, 3 A silicon rectifier | distributor | - | 2 | -65°C | 175°C | 32 K |
1N5404 | 400 V, 3 A general diode | distributor | DO | 2 | - | - | 49 K |
1N5404 | 400 V, 3 A, high current plastic silicon rectifier | distributor | DO | 2 | -55°C | 150°C | 155 K |
1N5404G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 175°C | 151 K |
1N5404G | 400 V, 1 A glass passivated rectifier | distributor | - | 2 | -65°C | 175°C | 32 K |
1N5404G | 600 V, 3 A, general purpose GPP diode | distributor | DO | 2 | - | - | 50 K |
1N5404G | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 150°C | 16 K |
V58C265404S | High performance 2.5V 16M x 4 DDR SDRAM 4 banks x 4Mbit x 4 | Mosel-Vitelic | TSOP | 64 | 0°C | 70°C | 391 K |
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