| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5406 | 600 V, 3 A, high current plastic silicon rectifier | distributor | - | 2 | -55°C | 150°C | 155 K |
| 1N5406G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. | distributor | - | 2 | -65°C | 150°C | 128 K |
| 1N5406GP | 600 V, 3 A glass passivated junction rectifier | distributor | - | 2 | -65°C | 175°C | 39 K |
| 5962H9475406VLA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. | distributor | DIP | 24 | -55°C | 125°C | 287 K |
| 5962H9475406VLC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. | distributor | DIP | 24 | -55°C | 125°C | 287 K |
| 5962H9475406VLC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. | distributor | DIP | 24 | -55°C | 125°C | 287 K |
| FUF5406 | 600 V, 3 A glass passivated ultrafast recovery rectifier | distributor | - | 2 | -65°C | 150°C | 38 K |
| IN5406 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. | distributor | - | 2 | -65°C | 125°C | 139 K |
| UF5406 | Ultra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 125°C | 159 K |
| UF5406 | Ultra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 125°C | 159 K |
| UF5406G | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 150°C | 165 K |
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