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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M54519FP7-unit 400mA darlington transistor arrayMitsubishi-Electric-Corporation-Semiconductor-Group-16-20°C75°C84 K
M54519P7-unit 400mA darlington transistor arrayMitsubishi-Electric-Corporation-Semiconductor-Group16P416-20°C75°C84 K
M54522FP8-unit 400mA darlington transistor array with clamp diodeMitsubishi-Electric-Corporation-Semiconductor-Group-20-20°C75°C112 K
M54522FP8-unit 400mA darlington transistor array with clamp diodeMitsubishi-Electric-Corporation-Semiconductor-Group-20-20°C75°C112 K
M54522P8-unit 400mA darlington transistor array with clamp diodeMitsubishi-Electric-Corporation-Semiconductor-Group18P4G18-20°C75°C112 K
MBR1545CT15A, 45V ultra fast recovery rectifierdistributor----105 K
MBR2545CT30A, 45V ultra fast recovery rectifierdistributor----99 K
MBRB1545CT15A, 45V ultra fast recovery rectifierdistributor----100 K
NTE5452Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 30V. RMS on-state current It = 4A.distributorTO2023-40°C100°C25 K
NTE5453Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 50V. RMS on-state current It = 4A.distributorTO2023-40°C100°C25 K
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