| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5460 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 94 K |
| 2N5460 | JFET amplifier | Motorola | - | 3 | -65°C | 135°C | 116 K |
| CS5460-BS | Single phase bi-directional power/energy IC | Cirrus-Logic | SSOP | 24 | -40°C | 85°C | 606 K |
| CS5460A-BS | Single phase bi-directional power/energy IC | Cirrus-Logic | SSOP | 24 | -40°C | 85°C | 1 M |
| MAX5460EXK | 2-wire digital potentiometer, 100KOm | Maxim-Integrated-Producs | SC70 | 5 | -40°C | 85°C | 264 K |
| MB54608LPFV | 1.0 GHz band low power I/Q modulator for direct conversion | Fujitsu-Microelectronis | plastic SSOP | 20 | -20°C | 75°C | 160 K |
| MB54608LPV1 | 1.0 GHz band low power I/Q modulator for direct conversion | Fujitsu-Microelectronis | plastic BCC | 16 | -20°C | 75°C | 160 K |
| MB54609PFV | Quadrature modulator IC (with 1.0 GHz Up-converter) | Fujitsu-Microelectronis | plastic SSOP | 20 | -20°C | 85°C | 185 K |
| NTE5460 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 800V. On-state RMS current It = 25A. | distributor | TO220 | 3 | -40°C | 125°C | 21 K |
| SMP5460 | P-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 94 K |
| [1] [2] [3] 4 [5] [6] [7] [8] |
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