| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IN74HC154DW | 1-of-16 decoder/demultiplexer, high-performance silicon-gate CMOS | distributor | SOIC | 24 | -55°C | 125°C | 119 K |
| KM416C254DT-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416C254DT-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416C254DT-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416C254DTL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416C254DTL-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416V254DJ-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJL-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
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