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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5529A0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance.distributor-2-65°C200°C243 K
1N5529B0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance.distributor-2-65°C200°C243 K
1N5529C0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance.distributor-2-65°C200°C243 K
1N5529D0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-1% tolerance.distributor-2-65°C200°C243 K
5962-9855201QXARadHard microcontroller: SMD. 12 MHz operating frequency. Class Q. Lead finish solder. Total dose none.distributorPGA144-55°C125°C1 M
5962-9855201QXCRadHard microcontroller: SMD. 12 MHz operating frequency. Class Q. Lead finish gold. Total dose none.distributorPGA144-55°C125°C1 M
LT6552CDD3.3V single supply video difference amplifierLinear-TechnologyDFN80°C70°C162 K
LT6552CS83.3V single supply video difference amplifierLinear-TechnologySO80°C70°C162 K
LT6552IDD3.3V single supply video difference amplifierLinear-TechnologyDFN8-40°C85°C162 K
LT6552IS83.3V single supply video difference amplifierLinear-TechnologySO8-40°C85°C162 K
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