Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5529 | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-20% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
1N5529 | Nom zener voltage:9.1V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | distributor | - | - | - | - | 39 K |
1N5529A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
1N5529B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
1N5529C | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
1N5529D | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-1% tolerance. | distributor | - | 2 | -65°C | 200°C | 243 K |
NTE5529 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 600V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
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