| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC5539 | NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 44 K |
| AD5539N | 10V; 550mW; ultrahigh frequency operational amplifier | Analog-Devices | DIP | 14 | 0°C | 70°C | 499 K |
| FDZ2553N | Dual N-Channel 2.5V Specified PowerTrench BGA MOSFET | Fairchild-Semiconductor | - | - | - | - | 199 K |
| HUF75531SK8 | 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 240 K |
| HUFA75531SK8 | 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 250 K |
| KA5532 | Dual Operational Amplifier | Fairchild-Semiconductor | - | - | - | - | 73 K |
| KID65553S | Single Driver (Common Emitter) | Korea-Electronics-Co--Ltd- | - | - | - | - | 239 K |
| KRA553E | Built in Bias Resistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 113 K |
| KRA553U | Built in Bias Resistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 113 K |
| NE5532 | Dual Operational Amplifier | Fairchild-Semiconductor | - | - | - | - | 79 K |
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