Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
AD5539Q | 10V; 550mW; ultrahigh frequency operational amplifier | Analog-Devices | CERDIP | 14 | 0°C | 70°C | 499 K |
BUK553-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 13 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
BUK553-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 13 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
BUK553-100B | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 12 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
BUK553-100B | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 12 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
NE5539D | High frequency operational amplifier. | Philips-Semiconductors | - | 14 | 0°C | 70°C | 230 K |
NE5539F | High frequency operational amplifier. | Philips-Semiconductors | 0581B | 14 | 0°C | 70°C | 230 K |
NE5539F | High frequency operational amplifier. | Philips-Semiconductors | Cerdip | 14 | 0°C | 70°C | 230 K |
NE5539F | High frequency operational amplifier. | Philips-Semiconductors | Cerdip | 14 | 0°C | 70°C | 230 K |
NE5539N | High frequency operational amplifier. | Philips-Semiconductors | - | 14 | 0°C | 70°C | 230 K |
NE5539N | High frequency operational amplifier. | Philips-Semiconductors | DIP | 14 | 0°C | 70°C | 230 K |
<< [35] [36] [37] [38] [39] 40 [41] [42] [43] [44] [45] >> |
---|