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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AD5539Q10V; 550mW; ultrahigh frequency operational amplifierAnalog-DevicesCERDIP140°C70°C499 K
BUK553-100APowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 13 A.Philips-SemiconductorsTO220AB30°C175°C71 K
BUK553-100APowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 13 A.Philips-SemiconductorsTO220AB30°C175°C71 K
BUK553-100BPowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 12 A.Philips-SemiconductorsTO220AB30°C175°C71 K
BUK553-100BPowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 12 A.Philips-SemiconductorsTO220AB30°C175°C71 K
NE5539DHigh frequency operational amplifier.Philips-Semiconductors-140°C70°C230 K
NE5539FHigh frequency operational amplifier.Philips-Semiconductors0581B140°C70°C230 K
NE5539FHigh frequency operational amplifier.Philips-SemiconductorsCerdip140°C70°C230 K
NE5539FHigh frequency operational amplifier.Philips-SemiconductorsCerdip140°C70°C230 K
NE5539NHigh frequency operational amplifier.Philips-Semiconductors-140°C70°C230 K
NE5539NHigh frequency operational amplifier.Philips-SemiconductorsDIP140°C70°C230 K
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