| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M27C4001-55XN1TR | 4 Mbit (512Kb x 8) EPROM, 55ns | SGS-Thomson-Microelectronics | TSOP | 32 | 0°C | 70°C | 113 K |
| M27C4001-55XN1X | 4 Mbit (512Kb x 8) EPROM, 55ns | SGS-Thomson-Microelectronics | TSOP | 32 | 0°C | 70°C | 113 K |
| M27C4001-55XN1X | 4 Mbit (512Kb x 8) EPROM, 55ns | SGS-Thomson-Microelectronics | TSOP | 32 | 0°C | 70°C | 113 K |
| M27C4001-55XN6TR | 4 Mbit (512Kb x 8) EPROM, 55ns | SGS-Thomson-Microelectronics | TSOP | 32 | -40°C | 85°C | 113 K |
| M27C4001-55XN6X | 4 Mbit (512Kb x 8) EPROM, 55ns | SGS-Thomson-Microelectronics | TSOP | 32 | -40°C | 85°C | 113 K |
| M5M5256DFP-55XL-W | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 28 | -40°C | 85°C | 46 K |
| M5M5256DKP-55XL-W | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | -40°C | 85°C | 46 K |
| M5M5256DP-55XL-W | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 28 | -40°C | 85°C | 46 K |
| M5M5256DRV-55XL-W | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | -40°C | 85°C | 46 K |
| M5M5256DVP-55XL-W | 262144-bit (32768-word by 8-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 28 | -40°C | 85°C | 46 K |
| MCRF455X/SN | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | SOIC | 8 | -20°C | 70°C | 1 M |
| [1] [2] [3] 4 [5] |
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