| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CY37256P256-125BGC | 5V, ISR high-performance CPLDs, 256 macrocells, 125MHz | Cypress-Semiconductor | BGA | 256 | 0°C | 70°C | 1 M |
| CY37256P256-125BGI | 5V, ISR high-performance CPLDs, 256 macrocells, 125MHz | Cypress-Semiconductor | BGA | 256 | -40°C | 85°C | 1 M |
| CY37384P256-125BGC | 5V, ISR high-performance CPLDs, 384 macrocells, 125MHz | Cypress-Semiconductor | BGA | 256 | 0°C | 70°C | 1 M |
| SMJ4256-12FV | 262144-bit dynamic random-access memory, 120ns | Texas-Instruments | FV | 18 | -55°C | 110°C | 947 K |
| SMJ4256-12JD | 262144-bit dynamic random-access memory, 120ns | Texas-Instruments | JD | 16 | -55°C | 110°C | 947 K |
| SMJ4256-12JD | 262144-bit dynamic random-access memory, 120ns | Texas-Instruments | JD | 16 | -55°C | 110°C | 947 K |
| TMS4256-12FMS | 262144-bit dynamic random-access memory, 120ns | Texas-Instruments | FM | 16 | -55°C | 100°C | 1 M |
| TMS4256-12FMS | 262144-bit dynamic random-access memory, 120ns | Texas-Instruments | FM | 16 | -55°C | 100°C | 1 M |
| TMS4256-12SDE | 262144-bit dynamic random-access memory, 120ns | Texas-Instruments | SD | 16 | -40°C | 85°C | 1 M |
| TMS4256-12SDL | 262144-bit dynamic random-access memory, 120ns | Texas-Instruments | SD | 16 | 0°C | 70°C | 1 M |
| TMS4256-12SDS | 262144-bit dynamic random-access memory, 120ns | Texas-Instruments | SD | 16 | -55°C | 100°C | 1 M |
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