| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962-9305604MYA | CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM | distributor | PDIP | 28 | - | - | 77 K |
| 5962-9305604MYC | CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM | distributor | PDIP | 28 | - | - | 77 K |
| 5962-9305605MYC | CMOS nvSRAM high performance 8K x 8 nonvolatile static RAM | distributor | PDIP | 28 | - | - | 77 K |
| K4S560432A-TC/L75 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 127 K |
| K4S560832A-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
| K4S560832A-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
| K4S560832A-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 126 K |
| K4S560832B-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
| K4S560832B-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
| K4S560832B-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
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