| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4H560438B-TCA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TCB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TLB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TCA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TCB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560838B-TLB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| MAX4560CEE | +-15kV ESD-protected, low-voltage, CMOS analog switch (triple SPDT). | Maxim-Integrated-Producs | QSOP | 16 | 0°C | 70°C | 305 K |
| MAX4560CSE | +-15kV ESD-protected, low-voltage, CMOS analog switch (triple SPDT). | Maxim-Integrated-Producs | Narrow SO | 16 | 0°C | 70°C | 305 K |
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