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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IC61SF25632D-7.5BI7.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorPBGA119-40°C85°C479 K
IC61SF25632D-7.5TQI7.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorLQFP100-40°C85°C479 K
IC61SF25632D-8.5BI8.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorPBGA119-40°C85°C479 K
IC61SF25632D-8.5TQI8.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorTQFP100-40°C85°C479 K
IC61SF25632D-9.5BI9.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorPBGA119-40°C85°C479 K
IC61SF25632D-9.5TQI9.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorTQFP100-40°C85°C479 K
IC61SF25632T-7.5TQI7.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorLQFP100-40°C85°C479 K
IC61SF25632T-8.5TQI8.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorTQFP100-40°C85°C479 K
IC61SF25632T-9.5TQI9.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAMdistributorTQFP100-40°C85°C479 K
NTE5632TRIAC, 10A. Repetitive peak off-state voltage Vdrm = 100V. RMS on-state current 10A.distributorTO2203-40°C125°C20 K
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