| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK564-200A | PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 9.2 A. | Philips-Semiconductors | SOT404 | 3 | 0°C | 175°C | 73 K |
| G5645 | Active area size:0.8x0.8mm; reverse voltage:5V; GaAsP photodiode. Short-wavelength type photodiode. For analytical instruments, UV detection | distributor | - | 2 | -30°C | 80°C | 148 K |
| HUF75645P3 | 75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 204 K |
| HUF75645S3S | 75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 204 K |
| HUFA75645P3 | 75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 236 K |
| HUFA75645S3S | 75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 236 K |
| KRA564E | Built in Bias Resistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 49 K |
| KRA564U | Built in Bias Resistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 50 K |
| KSB564A | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 41 K |
| uPD65646 | CMOS gate arrays | NEC-Electronics-Inc- | - | 100 | -40°C | 85°C | 741 K |
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