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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962H9657801QRCRadHard MSI: SMD. Octal D flip-flop w/clear. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si).distributorCeramic DIP20-55°C125°C10 M
5962H9657801QRXRadHard MSI: SMD. Octal D flip-flop w/clear. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si).distributorCeramic DIP20-55°C125°C10 M
5962H9657801QRXRadHard MSI: SMD. Octal D flip-flop w/clear. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si).distributorCeramic DIP20-55°C125°C10 M
5962H9657801QRXRadHard MSI: SMD. Octal D flip-flop w/clear. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si).distributorCeramic DIP20-55°C125°C10 M
IDT71V35781S166BQ256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHzIntegrated-Device-Technology-Inc-FBGA1650°C70°C282 K
IDT71V35781S183BQI256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHzIntegrated-Device-Technology-Inc-FBGA165-40°C85°C282 K
IDT71V35781S183BQI256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHzIntegrated-Device-Technology-Inc-FBGA165-40°C85°C282 K
IDT71V35781SA183BQ256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHzIntegrated-Device-Technology-Inc-FBGA1650°C70°C282 K
IDT71V35781YS166BQ256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHzIntegrated-Device-Technology-Inc-FBGA1650°C70°C282 K
IDT71V35781YS183BQI256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHzIntegrated-Device-Technology-Inc-FBGA165-40°C85°C282 K
IDT71V35781YSA166BQ256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHzIntegrated-Device-Technology-Inc-FBGA1650°C70°C282 K
IDT71V35781YSA183BQI256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHzIntegrated-Device-Technology-Inc-FBGA165-40°C85°C282 K
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