| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF5800 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.085 Ohm | International-Rectifier | TSOP | 6 | -55°C | 150°C | 98 K |
| M5M465800BJ-5S | Fast page mode 67108864-bit dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 362 K |
| M5M465800DJ-5 | (8388608-word by 8-BIT) dynamic RAM, 50ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 32 | 0°C | 70°C | 246 K |
| M5M465800DJ-5S | (8388608-word by 8-BIT) dynamic RAM, 50ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 32 | 0°C | 70°C | 246 K |
| M5M465800DJ-6 | (8388608-word by 8-BIT) dynamic RAM, 60ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 32 | 0°C | 70°C | 246 K |
| M5M465800DJ-6S | (8388608-word by 8-BIT) dynamic RAM, 60ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 32 | 0°C | 70°C | 246 K |
| ZC5800E | Schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 104 K |
| ZC5800E | Schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 104 K |
| ZMS5800 | Schottky barrier diode | Zetex-Semiconductor | SOD | 2 | -55°C | 150°C | 34 K |
| ZMS5800 | Schottky barrier diode | Zetex-Semiconductor | SOD | 2 | -55°C | 150°C | 34 K |
| [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] |
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