| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5810 | Complementary silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 162 K |
| 2N5811 | Complementary silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 162 K |
| 2N5812 | Complementary silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 162 K |
| 2N5813 | Complementary silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 162 K |
| 2N5814 | Complementary silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 162 K |
| 2N5815 | Complementary silicon AF medium power transistor | distributor | - | 3 | -55°C | 150°C | 162 K |
| IRF5810 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V | International-Rectifier | TSOP | 6 | -55°C | 150°C | 208 K |
| SM5817 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20V, max RMS voltage 14V, max DC blocking voltage 20V. Max average forward recftified current 1.0A at Ta=90degC | distributor | MELF | - | -65°C | 125°C | 191 K |
| SM5818 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 30V, max RMS voltage 21V, max DC blocking voltage 30V. Max average forward recftified current 1.0A at Ta=90degC | distributor | MELF | - | -65°C | 125°C | 191 K |
| SM5819 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 40V, max RMS voltage 28V, max DC blocking voltage 40V. Max average forward recftified current 1.0A at Ta=90degC | distributor | MELF | - | -65°C | 125°C | 191 K |
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