| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5817 | 20 V, 1 A, schottky barrier diode | distributor | DO | 2 | -65°C | 125°C | 155 K |
| 1N5818 | 30 V, 1 A, schottky barrier diode | distributor | DO | 2 | -65°C | 125°C | 155 K |
| 1N5819 | 40 V, 1 A, schottky barrier diode | distributor | DO | 2 | -65°C | 125°C | 155 K |
| NTE5810 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5811 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5812 | 6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 100V. Max RMS voltage 70V. Max average forward rectified current 6A. | distributor | - | 2 | -65°C | 175°C | 15 K |
| NTE5815 | 6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max average forward rectified current 6A. | distributor | - | 2 | -65°C | 175°C | 15 K |
| NTE5817 | 6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max average forward rectified current 6A. | distributor | - | 2 | -65°C | 175°C | 15 K |
| NTE5818 | Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V. | distributor | DO4 | 2 | -65°C | 150°C | 18 K |
| NTE5819 | Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V. | distributor | DO4 | 2 | -65°C | 150°C | 18 K |
| << [48] [49] [50] [51] [52] 53 [54] [55] [56] [57] [58] >> |
|---|
