| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M54585FP | 8-unit 500mA darlington transistor array with clamp diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 20 | -20°C | 75°C | 73 K |
| M54585P | 8-unit 500mA darlington transistor array with clamp diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | 18P4G | 18 | -20°C | 75°C | 73 K |
| NTE5851 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5852 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5853 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5854 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5856 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5857 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5858 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5859 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
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