| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD589JH | OutputV:1.235V; 125mW; 10mA; 2-terminal IC 1.2V reference | Analog-Devices | DIP | 8 | -55°C | 150°C | 80 K |
| NTE5890 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5892 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5893 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5895 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5897 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5898 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5899 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
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