Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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C5964-0800 | Pixel size:50(H) x 2500(V); number of pixels:256; supply voltage: -0.5 to +7V; NMOS multichannel detector head which incorporates a thermoelectrically-colled NMOS linear image sensor | distributor | - | - | 10°C | 30°C | 243 K |
C5964-0900 | Pixel size:50(H) x 2500(V); number of pixels:512; supply voltage: -0.5 to +7V; NMOS multichannel detector head which incorporates a thermoelectrically-colled NMOS linear image sensor | distributor | - | - | 10°C | 30°C | 243 K |
C5964-0910 | Pixel size:25(H) x 2500(V); number of pixels:512; supply voltage: -0.5 to +7V; NMOS multichannel detector head which incorporates a thermoelectrically-colled NMOS linear image sensor | distributor | - | - | 10°C | 30°C | 243 K |
C5964-1010 | Pixel size:25(H) x 2500(V); number of pixels:1024; supply voltage: -0.5 to +7V; NMOS multichannel detector head which incorporates a thermoelectrically-colled NMOS linear image sensor | distributor | - | - | 10°C | 30°C | 243 K |
MGFC39V5964A | 5.9-6.4 GHz band 8W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 99 K |
MGFC40V5964A | 5.9-6.4GHz band 10W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 99 K |
MGFC40V5964A | 5.9-6.4GHz band 10W internally matched GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 99 K |
MGFC42V5964A | 5.9-6.4GHz band 16W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 78 K |
MGFC44V5964 | 5.9-6.4GHz band 24W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 91 K |
MGFC45V5964A | 5.9-6.4 GHz band 32W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 17 K |
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