Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5985B | 500 milliwatts glass silicon zener diode, zener voltage 2.4V | Motorola | - | 2 | -65°C | 200°C | 424 K |
1N5986B | 500 milliwatts glass silicon zener diode, zener voltage 2.7V | Motorola | - | 2 | -65°C | 200°C | 424 K |
1N5987B | 500 milliwatts glass silicon zener diode, zener voltage 3V | Motorola | - | 2 | -65°C | 200°C | 424 K |
1N5988B | 500 milliwatts glass silicon zener diode, zener voltage 3.3V | Motorola | - | 2 | -65°C | 200°C | 424 K |
1N5989B | 500 milliwatts glass silicon zener diode, zener voltage 3.6V | Motorola | - | 2 | -65°C | 200°C | 424 K |
DCR5980Z12 | 1200V phase control thyristor | distributor | - | 2 | - | - | 126 K |
DCR5980Z14 | 1400V phase control thyristor | distributor | - | 2 | - | - | 126 K |
HM5259805BTD-75 | 512M; 133MHz LVTTL interface SDRAM | distributor | TQFP | 54 | - | - | 368 K |
HM5259805BTD-A6 | 512M; 100MHz LVTTL interface SDRAM | distributor | TQFP | 54 | - | - | 368 K |
NTE5981 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 40A. | distributor | - | 2 | -65°C | 175°C | 26 K |
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