| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962-9559801MRA | 7.5V; 0.9-1.3mW; 250MHz demodulating logarithmic amplifier. For IF/RF signal processing, received signal strength indicator (RSSI), high speed signal compression | Analog-Devices | CERDIP | 20 | -55°C | 125°C | 269 K |
| AD598AD | OutputV:+-11V; operateV:13-36V; 1.2W; LVDT signal conditioner | Analog-Devices | CERDIP | 20 | -40°C | 85°C | 447 K |
| AD598JR | OutputV:+-11V; operateV:13-36V; 1.2W; LVDT signal conditioner | Analog-Devices | SOIC | 20 | 0°C | 70°C | 447 K |
| NTE5980 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 40A. | distributor | - | 2 | -65°C | 175°C | 26 K |
| NTE5982 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. | distributor | - | 2 | -65°C | 175°C | 26 K |
| NTE5982 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. | distributor | - | 2 | -65°C | 175°C | 26 K |
| NTE5983 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. | distributor | - | 2 | -65°C | 175°C | 26 K |
| NTE5986 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. | distributor | - | 2 | -65°C | 175°C | 26 K |
| NTE5988 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. | distributor | - | 2 | -65°C | 175°C | 26 K |
| NTE5989 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. | distributor | - | 2 | -65°C | 175°C | 26 K |
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