| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1PS59SB10 | Schottky barrier single diode. | Philips-Semiconductors | SC59 | 3 | 0°C | 125°C | 33 K |
| 1PS59SB14 | Schottky barrier double diode. | Philips-Semiconductors | SC59 | 3 | 0°C | 125°C | 33 K |
| 1PS59SB15 | Schottky barrier double diode. | Philips-Semiconductors | SC59 | 3 | 0°C | 125°C | 33 K |
| 1PS59SB20 | Schottky barrier diode | Philips-Semiconductors | - | 3 | 0°C | 125°C | 50 K |
| 1PS59SB21 | Schottky barrier diode. | Philips-Semiconductors | - | 3 | 0°C | 125°C | 50 K |
| IDT70T659S008BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T659S010BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T659S010BCI | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 344 K |
| IDT70T659S012BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T659S015BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
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