| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CJD45H11 | PNP Complementary silicon power transistor | distributor | DPAK | 4 | -65°C | 150°C | 460 K |
| D45H10 | 80 V, complementary PNP silicon power transistor | distributor | - | 3 | -55°C | 150°C | 163 K |
| D45H10 | 80V 10Ampere complementary silicon power transistor | distributor | - | 3 | -55°C | 150°C | 157 K |
| D45H11 | 80 V, complementary PNP silicon power transistor | distributor | - | 3 | -55°C | 150°C | 163 K |
| D45H1A | 10Ampere PNP silicon power transistor | distributor | - | 3 | -55°C | 150°C | 88 K |
| D45H1B | 10Ampere PNP silicon power transistor | distributor | - | 3 | -55°C | 150°C | 91 K |
| E2505H19 | 2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 360 km, standard fiber. ITU-T wavelength 1562.23 nm. Frequency 191.9 THz. | distributor | Butterffly package | 14 | 0°C | 70°C | 230 K |
| EP05H10 | 60 V, diode | distributor | SOD | 2 | -40°C | 150°C | 28 K |
| R05H12 | 1W DC/DC converter with 5V input, +-12V/+-42mA output | distributor | DIP | 14 | -40°C | 85°C | 117 K |
| R05H15 | 1W DC/DC converter with 5V input, +-15V/+-33mA output | distributor | DIP | 14 | -40°C | 85°C | 117 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
|---|
