| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT7200LA65TPB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| IDT7201LA65TPB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| IDT7202LA65TPB | CMOS asynchronous FIFO 256 x 9, 512 x 9, 1K x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 152 K |
| IDT7205L65TPB | CMOS asynchronous FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 147 K |
| IDT7206L65TPB | CMOS asynchronous FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 | Integrated-Device-Technology-Inc- | THINDIP | 28 | -55°C | 125°C | 147 K |
| M5M4V4265TP-5 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | -20°C | 85°C | 311 K |
| M5M4V4265TP-6 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | -20°C | 85°C | 311 K |
| M5M4V4265TP-6S | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | -20°C | 85°C | 311 K |
| M5M4V4265TP-7 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | -20°C | 85°C | 311 K |
| M5M4V4265TP-7S | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | -20°C | 85°C | 311 K |
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