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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962G9475405VLARadiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder.distributorDIP24-55°C125°C287 K
5962G9475405VLCRadiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold.distributorDIP24-55°C125°C287 K
5962G9475405VLXRadiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional.distributorDIP24-55°C125°C287 K
5962G9475405VLXRadiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional.distributorDIP24-55°C125°C287 K
5962H9475405VLARadiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder.distributorDIP24-55°C125°C287 K
5962H9475405VLARadiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder.distributorDIP24-55°C125°C287 K
5962H9475405VLCRadiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold.distributorDIP24-55°C125°C287 K
M5M5256CRV-15VLL262144-bit (32768 x 8-bit) CMOS static RAM, 150nsMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP280°C70°C472 K
MTD3055VL1N–channel power MOSFET 12 Amps, 60 VoltsON-Semiconductor-3-55°C175°C86 K
MTD3055VLT4N–channel power MOSFET 12 Amps, 60 VoltsON-Semiconductor-3-55°C175°C86 K
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