| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK446-1000B | PowerMOS transistor. Drain-source voltage 1000 V. Drain current(DC) 1.5 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 63 K |
| BUK446-800A | PowerMOS transistor. Drain-source voltage 800 V. Drain current(DC) 2.0 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 64 K |
| BUK446-800B | PowerMOS transistor. Drain-source voltage 800 V. Drain current(DC) 1.7 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 64 K |
| BUK456-1000B | PowerMOS transistor. Drain-source voltage 1000 V. Drain current(DC) 3.1 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | -- |
| BUK456-200A | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 19 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 63 K |
| BUK456-200B | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 17 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 63 K |
| BUK456-800A | PowerMOS transistor. Drain-source voltage 800 V. Drain current(DC) 4 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | 62 K |
| BUK856-400IZ | Insulated gate bipolar transistor. Protected logic-level IGBT. | Philips-Semiconductors | TO220AB | 3 | -40°C | 150°C | 81 K |
| BUK856-800A | Insulated gate bipolar transistor (IGBT). | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | 60 K |
| BUK866-400IZ | Insulated gate bipolar transistor. Protected logic-level IGBT. | Philips-Semiconductors | SOT404 | 3 | -40°C | 150°C | 85 K |
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