| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| G9206-256W | Number of pixels:256; supply voltage:5.0V; clock pulse voltage: 5.5V; InGaAs linear near infrared (0.9 to 1.67um / 2.55um) image sensor | distributor | - | - | - | - | 133 K |
| H7826-01 | Input voltage: 11.5-15.5V; max input current:35mA; compact head-on PMT: photosensor module | distributor | - | - | 5°C | 45°C | 84 K |
| L2656-03 | 80mA; 5V; 1.0A; high power GaAIAs infrared LED. For optical switches and automatic control systems | distributor | - | 2 | -30°C | 85°C | 129 K |
| P1096-06 | 100Vdc; 100mW; CdS photoconductive cell: resin coating type. Standard type designed to withstand high voltage and high power | distributor | - | 2 | -30°C | 50°C | 114 K |
| P6606-110 | Active area: 1x1mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| P6606-210 | Active area: 1x1mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| P6606-305 | Active area: 0.5x0.5mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| P6606-310 | Active area: 1x1mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| P6606-320 | Active area: 2x2mm; 0.2mW; InSb photoconductive detector: thermoelectrically cooled detector capable of long-term measurements | distributor | - | 6 | -40°C | 60°C | 155 K |
| SMV1406-01 | 250mW; silicon hyperabrupt tuning diode | distributor | SOT23 | - | -55°C | 125°C | 37 K |
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