| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK446-1000B | PowerMOS transistor. Drain-source voltage 1000 V. Drain current(DC) 1.5 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 63 K |
| BUK456-1000B | PowerMOS transistor. Drain-source voltage 1000 V. Drain current(DC) 3.1 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | -- |
| BUK456-100A | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 67 K |
| BUK466-100A | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 34 A. | Philips-Semiconductors | SOT404 | 3 | 0°C | 175°C | 70 K |
| BZW06-102 | 600 W unidirectional and bidirectional transient voltage suppressor diodes, 102V | distributor | - | 2 | -65°C | 175°C | 66 K |
| BZW06-102B | 600 W unidirectional and bidirectional transient voltage suppressor diodes, 102V | distributor | - | 2 | -65°C | 175°C | 66 K |
| BZW06-10B | 600 W unidirectional and bidirectional transient voltage suppressor diodes, 10.2V | distributor | - | 2 | -65°C | 175°C | 66 K |
| EMIF06-10006F1 | 6 LINES EMI FILTER AND ESD PROTECTION | SGS-Thomson-Microelectronics | - | - | - | - | 235 K |
| TMS4256-10NE | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | -40°C | 85°C | 1 M |
| TMS4256-10NL | 262144-bit dynamic random-access memory, 100ns | Texas-Instruments | DIP | 16 | 0°C | 70°C | 1 M |
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