Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AV106-12 | GaAs IC 35 dB voltage variable attenuator single positive 3 V control 0.5-2.5 GHz | distributor | SOIC | 8 | -40°C | 85°C | 32 K |
FBO16-12N | 1200V single phase rectifier bridge | distributor | - | 5 | -55°C | 150°C | 35 K |
HY86-12 | 90 degree hybrid 0.82-0.9 GHz | distributor | SOIC | 8 | -40°C | 85°C | 48 K |
M28F256-12B1 | Memory configuration 32Kx8 Memory type Flash Memory size 256 K-bit 256K (32K8) FLASH memory - 120ns Access | SGS-Thomson-Microelectronics | DIL | 32 | - | - | 715 K |
M28F256-12C1 | Memory configuration 32Kx8 Memory type Flash Memory size 256 K-bit 256K (32K8) FLASH memory - 120ns Access (PLCC) | SGS-Thomson-Microelectronics | PLCC | 32 | - | - | 715 K |
M4-192/96-12VI | High-performance E2CMOS in-system programmable logic, 5V Vcc, 192 macrocells, 96 I/Os, 12ns | Lattice-Semiconductor-Corporation | TQFP | 144 | -40°C | 85°C | 720 K |
M4LV-192/96-12VC | High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 192 macrocells, 96 I/Os, 12ns | Lattice-Semiconductor-Corporation | TQFP | 144 | 0°C | 70°C | 720 K |
M4LV-192/96-12VI | High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 192 macrocells, 96 I/Os, 12ns | Lattice-Semiconductor-Corporation | TQFP | 144 | -40°C | 85°C | 720 K |
VBE26-12NO7 | 1200V ECO-PAC single phase rectifier bridge | distributor | - | 4 | -40°C | 150°C | 181 K |
VWI6-12P1 | 1200V IGBT module | distributor | - | 18 | -40°C | 150°C | 175 K |
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