Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CY37256P256-154BGC | 5V, ISR high-performance CPLDs, 256 macrocells, 154MHz | Cypress-Semiconductor | BGA | 256 | 0°C | 70°C | 1 M |
IC61LV6416-15B | 15ns; 3.3V; 64K x 16 high-speed CMOS static RAM | distributor | BGA | 44 | 0°C | 70°C | 95 K |
IC61LV6416-15BI | 15ns; 3.3V; 64K x 16 high-speed CMOS static RAM | distributor | BGA | 44 | -40°C | 85°C | 95 K |
IC61LV6416-15TI | 15ns; 3.3V; 64K x 16 high-speed CMOS static RAM | distributor | TSOP | 44 | -40°C | 85°C | 95 K |
TMS4256-15FMS | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | FM | 16 | -55°C | 100°C | 1 M |
TMS4256-15NS | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | DIP | 16 | -55°C | 100°C | 1 M |
TMS4256-15NS | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | DIP | 16 | -55°C | 100°C | 1 M |
TMS4256-15SDE | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | SD | 16 | -40°C | 85°C | 1 M |
TMS4256-15SDL | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | SD | 16 | 0°C | 70°C | 1 M |
TMS4256-15SDS | 262144-bit dynamic random-access memory, 150ns | Texas-Instruments | SD | 16 | -55°C | 100°C | 1 M |
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