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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BUK456-200APowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 19 A.Philips-SemiconductorsTO220AB30°C175°C63 K
BUK456-200BPowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 17 A.Philips-SemiconductorsTO220AB30°C175°C63 K
BUK466-200APowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 19 A.Philips-SemiconductorsSOT40430°C175°C67 K
M27256-20256K (32 x 8) UV erasable PROM, 200nsIntel-CorporationLCC32-55°C125°C554 K
M27256-20256K (32 x 8) UV erasable PROM, 200nsIntel-CorporationDIP28-55°C125°C554 K
M27256-20F1NMOS 256K (32K x 8) UV EPROM, 200nsSGS-Thomson-MicroelectronicsFDIP280°C70°C109 K
M27256-25256K (32 x 8) UV erasable PROM, 250nsIntel-CorporationDIP28-55°C125°C554 K
M27256-25256K (32 x 8) UV erasable PROM, 250nsIntel-CorporationLCC32-55°C125°C554 K
M27256-25F1NMOS 256K (32K x 8) UV EPROM, 250nsSGS-Thomson-MicroelectronicsFDIP280°C70°C109 K
M27256-2F1NMOS 256K (32K x 8) UV EPROM, 200nsSGS-Thomson-MicroelectronicsFDIP280°C70°C109 K
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