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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GLT4160L16-60J460ns; 1k x 16 CMOS dynamic RAM with extended data outputdistributorSOJ420°C70°C253 K
GLT4160L16-60TC60ns; 1k x 16 CMOS dynamic RAM with extended data outputdistributorTSOP440°C70°C253 K
GLT5160L16-6TC166 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAMdistributorTSOP440°C70°C6 M
IS41C16256-60K5V 256K x 16(4-MBIT) dynamic RAM with edo page modedistributorSOJ400°C70°C153 K
ISPLS1016-60LH/88360 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationJLCC44-55°C125°C145 K
LH5496-65CMOS 512 x 9 FIFOSharpDIP280°C70°C141 K
M4A3-192/96-6FAC6.0ns: high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA2560°C70°C1 M
M4A3-192/96-6VC6.0ns: high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationTQFP1440°C70°C1 M
M4A5-192/96-6VC6ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationTQFP144-40°C85°C1 M
M5LV-512/256-6AC6ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)Lattice-Semiconductor-CorporationBGA2560°C70°C1 M
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