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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM600HA-12H600 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C45 K
CM600HA-24H600 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C45 K
CM600HA-28H600 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C49 K
CM600HU-12H600 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C42 K
CM600HU-24H600 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C41 K
MJ16008450V 8A NPN silicon power transistordistributor-2-65°C200°C223 K
MJE16002450V switchmode series NPN silicon power transistordistributor-3-65°C150°C190 K
MJE16004450V switchmode series NPN silicon power transistordistributor-3-65°C150°C190 K
MJH16002450V switchmode series NPN silicon power transistordistributor-3-65°C150°C189 K
MJH16004450V switchmode series NPN silicon power transistordistributor-3-65°C150°C189 K
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