Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CM600HA-12H | 600 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 45 K |
CM600HA-24H | 600 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 45 K |
CM600HA-28H | 600 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 49 K |
CM600HU-12H | 600 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 42 K |
CM600HU-24H | 600 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 41 K |
MJ16008 | 450V 8A NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 223 K |
MJE16002 | 450V switchmode series NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 190 K |
MJE16004 | 450V switchmode series NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 190 K |
MJH16002 | 450V switchmode series NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 189 K |
MJH16004 | 450V switchmode series NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 189 K |
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