| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
| K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
| K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 24 | 0°C | 70°C | 256 K |
| K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
| K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
| K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
| K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 24 | 0°C | 70°C | 256 K |
| K4H560438B-TCA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
| K4H560438B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 658 K |
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