| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD604AN | 6.5V; dual, ultrasound noise variable gain amplifier. For ultrasound and sonar time-gain control | Analog-Devices | DIP | 24 | -40°C | 85°C | 436 K |
| AD604ARS | 6.5V; dual, ultrasound noise variable gain amplifier. For ultrasound and sonar time-gain control | Analog-Devices | SSOP | 24 | -40°C | 85°C | 436 K |
| PBYR6040WT | Rectifier diode. Schottky barrier. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 24 K |
| PBYR6040WT | Rectifier diode. Schottky barrier. | Philips-Semiconductors | TO247 | 3 | 0°C | 150°C | 24 K |
| PBYR6045WT | Rectifier diode. Schottky barrier. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 24 K |
| Q6040K7 | Alternistor triac, 40A, 600 Volt | distributor | - | 3 | -40°C | 125°C | 536 K |
| RD28F1604C3B90 | 16-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 90ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
| RD28F1604C3T110 | 16-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family,110ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
| RD28F1604C3T110 | 16-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family,110ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
| RD28F1604C3T90 | 16-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 90ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
| SA604AD | High performance low power FM IF system. | Philips-Semiconductors | SO | 16 | -40°C | 85°C | 142 K |
| << [75] [76] [77] [78] [79] 80 [81] [82] [83] [84] [85] >> |
|---|
